BUZ10 n - channel 50v - 0.06 w - 23a to-220 stripfet ? mosfet n typical r ds(on) = 0.06 w n avalanche rugged technology n 100% avalanche tested n high current capability n 175 o c operating temperature applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) ? internal schematic diagram february 2000 1 2 3 to-220 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 50 v v dgr drain- gate voltage (r gs = 20 k w )50v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c23a i dm drain current (pulsed) 92 a p tot total dissipation at t c = 25 o c75w t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c din humidity category (din 40040) e iec climatic category (din iec 68-1) 55/150/56 first digit of the datecode being z or k identifies silicon characterized in this datasheet. type v dss r ds(on) i d BUZ10 50 v < 0.07 w 23 a 1/8
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 2.0 62.5 o c/w o c/w avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 10 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 30 v) 150 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 50 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t j = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 1 ma 2.1 3 4 v r ds(on) static drain-source on resistance v gs = 10v i d = 14 a 0.06 0.07 w dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds = 25 v i d = 14 a 6 11 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 900 130 40 pf pf pf switching symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on time rise time turn-off delay time fall time v dd = 30 v i d = 10 a r gs = 4.7 w v gs = 10 v 20 45 48 10 ns ns ns ns BUZ10 2/8
electrical characteristics (continued) source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) 23 92 a a v sd ( * ) forward on voltage i sd = 46 a v gs = 0 1.9 v t rr q rr reverse recovery time reverse recovery charge i sd = 23 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c 50 0.17 ns m c ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating area thermal impedance BUZ10 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations BUZ10 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature BUZ10 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times BUZ10 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c BUZ10 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . BUZ10 8/8
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